Simulation of TiN/HfO2/Pt memristor I–V curve for different conductive filament thickness

The operation of the TiN/HfO 2 /Pt bipolar memristor has been simulated by finite elements method using Maxwell steady state equations as a mathematical basis. simulation provided knowledge effect conductive filament thickness on shape I-V curve. considered highly Hf ion enriched HfO x phase ( < 2) whose structure is similar to Magneli phase. In this work mechanism developed describing formation, growth and dissolution in mode which provides for oxygen vacancy flux control. cylindrical with radius varying within 5–10 nm. An increase leads an area hysteresis loop curve due energy output during operation. A model allows quantitative calculations hence can be used design memristors assessment heat loss